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Semiconductors Transistors NPN bipolar transistors

NPN transistor, SOT23, 4.87k Ohms - SMBTA42

NPN transistor, SOT23, 4.87k Ohms - SMBTA42
[TITLE]
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 9 0.23£ 0.28£
10 - 24 0.22£ 0.26£
25 - 49 0.17£ 0.20£
50 - 99 0.19£ 0.23£
100 - 230 0.19£ 0.23£
Quantity U.P
1 - 9 0.23£ 0.28£
10 - 24 0.22£ 0.26£
25 - 49 0.17£ 0.20£
50 - 99 0.19£ 0.23£
100 - 230 0.19£ 0.23£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 230
Set of 1

NPN transistor, SOT23, 4.87k Ohms - SMBTA42. NPN transistor, SOT23, 4.87k Ohms. Housing: SOT23. Collector-Emitter Voltage VCEO: 4.87k Ohms. Type: transistor for low power applications. Polarity: NPN. Power: 0.36W. Collector-Base Voltage VCBO: 4.87k Ohms. Mounting Type: SMD. Bandwidth MHz: 50MHz. DC Collector/Base Gain hFE min.: 25. Current Max 1: 0.5A. Series: SMBTA. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 01/08/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 2359
MMBTA42

MMBTA42

NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 300V. Collector current: 0.5A. Housing: S...
MMBTA42
NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 300V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 300V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: high voltage amplifier transistor (SMD version of the MPSA42 transistor). Max hFE gain: 40. Minimum hFE gain: 25. Note: 1D. Marking on the case: 1D. Number of terminals: 3. Pd (Power Dissipation, Max): 240mW. RoHS: yes. Spec info: complementary transistor (pair) MMBTA92. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Vebo: 6V
MMBTA42
NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 300V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 300V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: high voltage amplifier transistor (SMD version of the MPSA42 transistor). Max hFE gain: 40. Minimum hFE gain: 25. Note: 1D. Marking on the case: 1D. Number of terminals: 3. Pd (Power Dissipation, Max): 240mW. RoHS: yes. Spec info: complementary transistor (pair) MMBTA92. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Vebo: 6V
Set of 10
1.04£ VAT incl.
(0.87£ excl. VAT)
1.04£

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