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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23, 300V - SMBTA42

NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23, 300V - SMBTA42
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Quantity excl. VAT VAT incl.
1 - 9 0.0880£ 0.1056£
10 - 24 0.0836£ 0.1003£
25 - 49 0.0810£ 0.0972£
50 - 99 0.0792£ 0.0950£
100 - 249 0.0774£ 0.0929£
250 - 499 0.0685£ 0.0822£
500 - 2271 0.0660£ 0.0792£
Quantity U.P
1 - 9 0.0880£ 0.1056£
10 - 24 0.0836£ 0.1003£
25 - 49 0.0810£ 0.0972£
50 - 99 0.0792£ 0.0950£
100 - 249 0.0774£ 0.0929£
250 - 499 0.0685£ 0.0822£
500 - 2271 0.0660£ 0.0792£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2271
Set of 1

NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23, 300V - SMBTA42. NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23, 300V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 300V. BE diode: no. C(in): 11pF. Cost): 1.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: high voltage amplifier, SMD version of MPSA42. Minimum hFE gain: 25. Note: complementary transistor (pair) SMBTA92. Marking on the case: s1D. Pd (Power Dissipation, Max): 0.36W. RoHS: yes. Spec info: screen printing/SMD code S1D. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 13/05/2025, 20:25.

Technical documentation

Equivalent products :

Quantity in stock : 10466
MMBTA42

MMBTA42

NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 300V. Collector current: 0.5A. Housing: S...
MMBTA42
NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 300V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 300V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: high voltage amplifier transistor (SMD version of the MPSA42 transistor). Max hFE gain: 40. Minimum hFE gain: 25. Note: 1D. Marking on the case: 1D. Number of terminals: 3. Pd (Power Dissipation, Max): 240mW. RoHS: yes. Spec info: complementary transistor (pair) MMBTA92. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Vebo: 6V
MMBTA42
NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 300V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 300V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: high voltage amplifier transistor (SMD version of the MPSA42 transistor). Max hFE gain: 40. Minimum hFE gain: 25. Note: 1D. Marking on the case: 1D. Number of terminals: 3. Pd (Power Dissipation, Max): 240mW. RoHS: yes. Spec info: complementary transistor (pair) MMBTA92. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Vebo: 6V
Set of 10
0.53£ VAT incl.
(0.44£ excl. VAT)
0.53£

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