NPN bipolar transistors

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 750V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 750V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: High-speed switching. Max hFE gain: 10. Minimum hFE gain: 5. Ic(pulse): 20A. Marking on the case: J6810A. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf (type): 0.2us. Type of transistor: NPN. Vcbo: 1550V. Maximum saturation voltage VCE(sat): 3V. Vebo: 6V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 750V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 750V. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High V Color Display Hor Defl (with Damper Diode)'. Max hFE gain: 8. Minimum hFE gain: 5. Ic(pulse): 20A. Note: screen printed J6810. Marking on the case: J6810D. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: High Switching Speed--tF(typ.)=0.1uS. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 6V

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 750V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 750V. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 10. Ic(pulse): 24A. Note: screen printed J6812. Marking on the case: J6812. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: High Switching Speed--tF(typ.)=0.1uS. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 6V

NPN transistor, 17A, TO-264 ( TOP-3L ), TO-264, 250V. Collector current: 17A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 250V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: J4315O. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) FJL4215-O. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN transistor, 20A, TO-247, TO-247, 750V. Collector current: 20A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 750V. Quantity per case: 1. Semiconductor material: silicon. Function: 19 inch monitor. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. Spec info: VEBO 6V. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V

NPN transistor, 20A, TO-264 ( TOP-3L ), TO-264, 800V. Collector current: 20A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 800V. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 8.5. Minimum hFE gain: 5.5. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.2us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1700V. Saturation voltage VCE(sat): 3V. Vebo: 6V

NPN transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: switching circuits. Minimum hFE gain: 30. Ic(pulse): 300mA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Spec info: SAMSUNG 0504-000117. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 10V

NPN transistor, 8A, TO-220, TO-220, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 110pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 60. Minimum hFE gain: 8. Ic(pulse): 16A. Marking on the case: J13007. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Vebo: 9V

NPN transistor, 8A, TO-220, TO-220, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 110pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 28. Minimum hFE gain: 15. Ic(pulse): 16A. Marking on the case: J13007-1. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Vebo: 9V

NPN transistor, 8A, TO-220, TO-220, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 110pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 39. Minimum hFE gain: 26. Ic(pulse): 16A. Marking on the case: J13007-2. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Vebo: 9V

NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 180pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 17. Minimum hFE gain: 8. Ic(pulse): 24A. Marking on the case: J13009. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V

NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 180pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 28. Minimum hFE gain: 15. Ic(pulse): 24A. Marking on the case: J13009-2. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V

NPN transistor, PCB soldering (SMD), SOT-23, 2A. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 2A. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 619. Collector-emitter voltage Uceo [V]: 50V. Cutoff frequency ft [MHz]: 165 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 160V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: hFE 5000. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. RoHS: yes. Spec info: complementary transistor (pair) FP1016. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering (SMD), SOT-223, 0.3A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 0.3A. RoHS: yes. Component family: high voltage NPN transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT458. Collector-emitter voltage Uceo [V]: 400V. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-223, 7A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 7A. RoHS: yes. Component family: NPN power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT849. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor. CE diode: yes. Quantity per case: 1

NPN transistor, 24A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 800V. Collector current: 24A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA hi-res (F). Ic(pulse): 36A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: 0.17...0.31us. Assembly/installation: PCB through-hole mounting. Tf(max): 250 ns. Tf(min): 180 ns. Type of transistor: NPN. Vcbo: 1700V. Saturation voltage VCE(sat): 0.95V. Maximum saturation voltage VCE(sat): 3V. Vebo: 10V

NPN transistor. Quantity per case: 1. Function: HA, hi-def. Note: 0.2. Spec info: MONITOR

NPN transistor. CE diode: yes. Quantity per case: 1. Function: HA, hi-def. Note: 0.2. Spec info: MONITOR

NPN transistor, 7A, TO-220FP, TO-220FP, 400V. Collector current: 7A. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. Function: High Speed ​​Switching. Max hFE gain: 47. Minimum hFE gain: 29. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. Spec info: 'Epitaxial Planar Transistor'. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 450V. Saturation voltage VCE(sat): 0.8V. Vebo: 10V

NPN transistor, 0.1A, TO-126F, TO-126ML, 160V. Collector current: 0.1A. Housing: TO-126F. Housing (according to data sheet): TO-126ML. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 160...320. Spec info: complementary transistor (pair) HSB1109. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 500mA, TO-5, TO-5, 75V. Collector current: 500mA. Housing: TO-5. Housing (according to data sheet): TO-5. Collector/emitter voltage Vceo: 75V. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 35...125. Pd (Power Dissipation, Max): 0.8W. Spec info: Lo-Pwr BJT. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Spec info: TO-92M. Type of transistor: NPN

NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Spec info: TO-92M. Type of transistor: NPN