Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.44£ | 0.53£ |
5 - 9 | 0.42£ | 0.50£ |
10 - 24 | 0.39£ | 0.47£ |
25 - 49 | 0.37£ | 0.44£ |
50 - 99 | 0.24£ | 0.29£ |
100 - 249 | 0.24£ | 0.29£ |
250 - 736 | 0.23£ | 0.28£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.44£ | 0.53£ |
5 - 9 | 0.42£ | 0.50£ |
10 - 24 | 0.39£ | 0.47£ |
25 - 49 | 0.37£ | 0.44£ |
50 - 99 | 0.24£ | 0.29£ |
100 - 249 | 0.24£ | 0.29£ |
250 - 736 | 0.23£ | 0.28£ |
NPN transistor, TO-50, 0.025A, TO-50-3, 25V - BFW92A. NPN transistor, TO-50, 0.025A, TO-50-3, 25V. Housing: TO-50. Collector current: 0.025A. Housing (according to data sheet): TO-50-3. Collector/emitter voltage Vceo: 25V. Resistor B: no. BE diode: high frequency NPN transistor. BE resistor: PCB soldering (SMD). C(in): TO-50. CE diode: surface-mounted component (SMD). Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3.2GHz. Function: Wide band RF amplifier up to GHz range.. Max hFE gain: 150. Minimum hFE gain: 20. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 25V. Saturation voltage VCE(sat): 0.1V. Spec info: 'Planar RF Transistor'. Quantity in stock updated on 21/04/2025, 23:25.
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