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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 80A, 100uA, 5M Ohms, TO-220, TO-220, 30 v - Q67042-S4113

N-channel transistor, 80A, 100uA, 5M Ohms, TO-220, TO-220, 30 v - Q67042-S4113
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Quantity excl. VAT VAT incl.
1 - 1 5.44£ 6.53£
2 - 2 5.17£ 6.20£
3 - 4 4.90£ 5.88£
5 - 6 4.62£ 5.54£
Quantity U.P
1 - 1 5.44£ 6.53£
2 - 2 5.17£ 6.20£
3 - 4 4.90£ 5.88£
5 - 6 4.62£ 5.54£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 6
Set of 1

N-channel transistor, 80A, 100uA, 5M Ohms, TO-220, TO-220, 30 v - Q67042-S4113. N-channel transistor, 80A, 100uA, 5M Ohms, TO-220, TO-220, 30 v. ID (T=25°C): 80A. Idss (max): 100uA. On-resistance Rds On: 5M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 30 v. C(in): 2930pF. Cost): 1150pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Id(imp): 380A. IDss (min): 0.1uA. Marking on the case: 2N03L04. Pd (Power Dissipation, Max): 188W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 13 ns. Technology: Cool Mos. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1.2V. Number of terminals: 3. Quantity per case: 1. Spec info: Enhancement mode, Logic Level. G-S Protection: no. Quantity in stock updated on 21/04/2025, 08:25.

Technical documentation

Equivalent products :

Quantity in stock : 85
IRLB8743PBF

IRLB8743PBF

N-channel transistor, 100A, 150A, 100uA, 2.5M Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 100A. ID ...
IRLB8743PBF
N-channel transistor, 100A, 150A, 100uA, 2.5M Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 100A. ID (T=25°C): 150A. Idss (max): 100uA. On-resistance Rds On: 2.5M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. C(in): 5110pF. Cost): 960pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: UPS. DC/DC Converter. Id(imp): 620A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Spec info: High Frequency Synchronous. Drain-source protection : yes. G-S Protection: no
IRLB8743PBF
N-channel transistor, 100A, 150A, 100uA, 2.5M Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 100A. ID (T=25°C): 150A. Idss (max): 100uA. On-resistance Rds On: 2.5M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. C(in): 5110pF. Cost): 960pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: UPS. DC/DC Converter. Id(imp): 620A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Spec info: High Frequency Synchronous. Drain-source protection : yes. G-S Protection: no
Set of 1
1.55£ VAT incl.
(1.29£ excl. VAT)
1.55£
Quantity in stock : 1297
IRLB8748PBF

IRLB8748PBF

N-channel transistor, 100A, 150A, 150uA, 2.5M Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 100A. ID ...
IRLB8748PBF
N-channel transistor, 100A, 150A, 150uA, 2.5M Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 100A. ID (T=25°C): 150A. Idss (max): 150uA. On-resistance Rds On: 2.5M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. C(in): 5110pF. Cost): 960pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: UPS. DC/DC Converter. Id(imp): 620A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) min.: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. G-S Protection: no
IRLB8748PBF
N-channel transistor, 100A, 150A, 150uA, 2.5M Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 100A. ID (T=25°C): 150A. Idss (max): 150uA. On-resistance Rds On: 2.5M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. C(in): 5110pF. Cost): 960pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: UPS. DC/DC Converter. Id(imp): 620A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) min.: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. G-S Protection: no
Set of 1
1.13£ VAT incl.
(0.94£ excl. VAT)
1.13£
Quantity in stock : 14
STP80NF55-08

STP80NF55-08

N-channel transistor, 57A, 80A, 10uA, 0.0065 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 57A. ID (T=...
STP80NF55-08
N-channel transistor, 57A, 80A, 10uA, 0.0065 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 10uA. On-resistance Rds On: 0.0065 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 320A. IDss (min): 1uA. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Function: motor control, audio amplifier. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
STP80NF55-08
N-channel transistor, 57A, 80A, 10uA, 0.0065 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 10uA. On-resistance Rds On: 0.0065 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 320A. IDss (min): 1uA. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Function: motor control, audio amplifier. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
Set of 1
3.82£ VAT incl.
(3.18£ excl. VAT)
3.82£
Quantity in stock : 99
STP80NF06

STP80NF06

N-channel transistor, 80A, 80A, 10uA, 0.0065 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 80A. ID (T=...
STP80NF06
N-channel transistor, 80A, 80A, 10uA, 0.0065 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 10uA. On-resistance Rds On: 0.0065 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: SWITCHING APPLICATION. Id(imp): 320A. IDss (min): 1uA. Marking on the case: P80NF06. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -65...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
STP80NF06
N-channel transistor, 80A, 80A, 10uA, 0.0065 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 10uA. On-resistance Rds On: 0.0065 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: SWITCHING APPLICATION. Id(imp): 320A. IDss (min): 1uA. Marking on the case: P80NF06. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -65...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
Set of 1
2.40£ VAT incl.
(2.00£ excl. VAT)
2.40£

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