Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.82£ | 2.18£ |
5 - 9 | 1.73£ | 2.08£ |
10 - 24 | 1.64£ | 1.97£ |
25 - 49 | 1.55£ | 1.86£ |
50 - 55 | 1.51£ | 1.81£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.82£ | 2.18£ |
5 - 9 | 1.73£ | 2.08£ |
10 - 24 | 1.64£ | 1.97£ |
25 - 49 | 1.55£ | 1.86£ |
50 - 55 | 1.51£ | 1.81£ |
N-channel transistor, 9.05A, 12.8A, 10uA, 0.142 Ohms, TO-220, TO-220AB, 100V - FQP13N10. N-channel transistor, 9.05A, 12.8A, 10uA, 0.142 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 9.05A. ID (T=25°C): 12.8A. Idss (max): 10uA. On-resistance Rds On: 0.142 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 345pF. Cost): 100pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 72 ns. Type of transistor: MOSFET. Id(imp): 51.2A. IDss (min): 1uA. Pd (Power Dissipation, Max): 65W. RoHS: yes. Weight: 2.07g. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 5 ns. Technology: N-Channel enhancement mode power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 50. Function: N-CH/100V/12.8A/0.18 Ohms MOSFET NON MPQ. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 17:25.
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