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N-channel transistor, 68A, 98A, 10uA, 0.0098 Ohms, TO-220, TO-220, 68V - STP80NF70

N-channel transistor, 68A, 98A, 10uA, 0.0098 Ohms, TO-220, TO-220, 68V - STP80NF70
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 3.67£ 4.40£
5 - 9 3.49£ 4.19£
10 - 24 3.30£ 3.96£
25 - 49 3.12£ 3.74£
50 - 77 2.88£ 3.46£
Quantity U.P
1 - 4 3.67£ 4.40£
5 - 9 3.49£ 4.19£
10 - 24 3.30£ 3.96£
25 - 49 3.12£ 3.74£
50 - 77 2.88£ 3.46£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 77
Set of 1

N-channel transistor, 68A, 98A, 10uA, 0.0098 Ohms, TO-220, TO-220, 68V - STP80NF70. N-channel transistor, 68A, 98A, 10uA, 0.0098 Ohms, TO-220, TO-220, 68V. ID (T=100°C): 68A. ID (T=25°C): 98A. Idss (max): 10uA. On-resistance Rds On: 0.0098 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 68V. C(in): 2550pF. Cost): 550pF. Channel type: N. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 392A. IDss (min): 1uA. Marking on the case: 80NF70. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 17 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 22:25.

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IRF8010
N-channel transistor, 57A, 80A, 250uA, 12m Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. On-resistance Rds On: 12m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 3850pF. Cost): 480pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 320A. IDss (min): 20uA. Pd (Power Dissipation, Max): 260W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 61 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no
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N-channel transistor, 57A, 80A, 250uA, 12m Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. On-resistance Rds On: 12m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 3850pF. Cost): 480pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 320A. IDss (min): 20uA. Pd (Power Dissipation, Max): 260W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 61 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no
Set of 1
2.14£ VAT incl.
(1.78£ excl. VAT)
2.14£

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