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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 3.2A, 5A, 250uA, 1.4 Ohms, TO-220, TO-220AB, 500V - IRF830APBF

N-channel transistor, 3.2A, 5A, 250uA, 1.4 Ohms, TO-220, TO-220AB, 500V - IRF830APBF
Quantity excl. VAT VAT incl.
1 - 4 1.16£ 1.39£
5 - 9 1.11£ 1.33£
10 - 24 1.05£ 1.26£
25 - 49 0.99£ 1.19£
50 - 71 0.97£ 1.16£
Quantity U.P
1 - 4 1.16£ 1.39£
5 - 9 1.11£ 1.33£
10 - 24 1.05£ 1.26£
25 - 49 0.99£ 1.19£
50 - 71 0.97£ 1.16£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 71
Set of 1

N-channel transistor, 3.2A, 5A, 250uA, 1.4 Ohms, TO-220, TO-220AB, 500V - IRF830APBF. N-channel transistor, 3.2A, 5A, 250uA, 1.4 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 3.2A. ID (T=25°C): 5A. Idss (max): 250uA. On-resistance Rds On: 1.4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 620 ns. Cost): 93 ns. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 430 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 20A. IDss (min): 25uA. Temperature: +105°C. Pd (Power Dissipation, Max): 74W. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 2V. Quantity in stock updated on 21/04/2025, 23:25.

Technical documentation

Equivalent products :

Quantity in stock : 41
IRF830

IRF830

N-channel transistor, 2.9A, 4.5A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 2.9A. ID (...
IRF830
N-channel transistor, 2.9A, 4.5A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 2.9A. ID (T=25°C): 4.5A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 610pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 320 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 18A. IDss (min): 25uA. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
IRF830
N-channel transistor, 2.9A, 4.5A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 2.9A. ID (T=25°C): 4.5A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 610pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 320 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 18A. IDss (min): 25uA. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
1.28£ VAT incl.
(1.07£ excl. VAT)
1.28£

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