N-channel transistor, 3.3A, 5.5A, 250uA, 1 Ohm, TO-220, TO-220AB, 400V - IRF730

N-channel transistor, 3.3A, 5.5A, 250uA, 1 Ohm, TO-220, TO-220AB, 400V - IRF730. N-channel transistor, 3.3A, 5.5A, 250uA, 1 Ohm, TO-220, TO-220AB, 400V. ID (T=100°C): 3.3A. ID (T=25°C): 5.5A. Idss (max): 250uA. On-resistance Rds On: 1 Ohm. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. C(in): 700pF. Cost): 170pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 22A. IDss (min): 25uA. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 20/04/2025, 16:25.