Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.07£ | 1.28£ |
5 - 9 | 1.02£ | 1.22£ |
10 - 24 | 0.97£ | 1.16£ |
25 - 41 | 0.91£ | 1.09£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.07£ | 1.28£ |
5 - 9 | 1.02£ | 1.22£ |
10 - 24 | 0.97£ | 1.16£ |
25 - 41 | 0.91£ | 1.09£ |
N-channel transistor, 2.9A, 4.5A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 500V - IRF830. N-channel transistor, 2.9A, 4.5A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 2.9A. ID (T=25°C): 4.5A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 610pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 320 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 18A. IDss (min): 25uA. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 20/04/2025, 23:25.
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