N-channel transistor, 5A, 6.5A, 5uA, 0.0155 Ohms, SO, SO-8, 30 v - SI4800BDY-T1-E3

Quantity	excl. VAT	VAT incl.
1 - 4	1.10£	1.32£
5 - 9	1.04£	1.25£
10 - 24	0.99£	1.19£
25 - 49	0.93£	1.12£
50 - 59	0.91£	1.09£

Quantity	U.P
1 - 4	1.10£	1.32£
5 - 9	1.04£	1.25£
10 - 24	0.99£	1.19£
25 - 49	0.93£	1.12£
50 - 59	0.91£	1.09£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 59

Set of 1

N-channel transistor, 5A, 6.5A, 5uA, 0.0155 Ohms, SO, SO-8, 30 v - SI4800BDY-T1-E3. N-channel transistor, 5A, 6.5A, 5uA, 0.0155 Ohms, SO, SO-8, 30 v. ID (T=100°C): 5A. ID (T=25°C): 6.5A. Idss (max): 5uA. On-resistance Rds On: 0.0155 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: N. Type of transistor: MOSFET. Id(imp): 40Ap. IDss (min): 1uA. Marking on the case: 4800B. Number of terminals: 8. Pd (Power Dissipation, Max): 1.3W. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 7 ns. Technology: TrenchFET ® Power MOSFET Reduced Qg. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 1.8V. Vgs(th) min.: 0.8V. Quantity per case: 1. Function: Fast Switching, Power MOSFET. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 09:25.

Technical documentation