Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.79£ | 0.95£ |
5 - 9 | 0.75£ | 0.90£ |
10 - 24 | 0.71£ | 0.85£ |
25 - 47 | 0.67£ | 0.80£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.79£ | 0.95£ |
5 - 9 | 0.75£ | 0.90£ |
10 - 24 | 0.71£ | 0.85£ |
25 - 47 | 0.67£ | 0.80£ |
NPN transistor, 10A, TO-220, TO-220AB, 60V - MJE3055T-FAI. NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Vebo: 5V. Spec info: complementary transistor (pair) MJE2955T. BE diode: no. CE diode: no. Quantity in stock updated on 19/04/2025, 20:25.
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