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Semiconductors Transistors NPN bipolar transistors

NPN transistor, PCB soldering, TO-220AB, 10A - MJE3055T

NPN transistor, PCB soldering, TO-220AB, 10A - MJE3055T
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Quantity excl. VAT VAT incl.
1 - 4 1.25£ 1.50£
5 - 9 1.19£ 1.43£
10 - 24 0.94£ 1.13£
25 - 49 0.92£ 1.10£
50 - 99 0.90£ 1.08£
100 - 187 0.87£ 1.04£
Quantity U.P
1 - 4 1.25£ 1.50£
5 - 9 1.19£ 1.43£
10 - 24 0.94£ 1.13£
25 - 49 0.92£ 1.10£
50 - 99 0.90£ 1.08£
100 - 187 0.87£ 1.04£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 187
Set of 1

NPN transistor, PCB soldering, TO-220AB, 10A - MJE3055T. NPN transistor, PCB soldering, TO-220AB, 10A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE3055T. Collector-emitter voltage Uceo [V]: 60V. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 26/07/2025, 09:25.

Technical documentation

Equivalent products :

Quantity in stock : 46
MJE3055T-FAI

MJE3055T-FAI

NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (accord...
MJE3055T-FAI
NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: complementary transistor (pair) MJE2955T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Vebo: 5V
MJE3055T-FAI
NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: complementary transistor (pair) MJE2955T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Vebo: 5V
Set of 1
0.95£ VAT incl.
(0.79£ excl. VAT)
0.95£

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