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Semiconductors Transistors FET and MOSFET transistors

P-channel transistor, 6.8A, 500uA, TO-220, TO-220AB, 100V - IRF9520

P-channel transistor, 6.8A, 500uA, TO-220, TO-220AB, 100V - IRF9520
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.02£ 1.22£
5 - 9 0.97£ 1.16£
10 - 17 0.92£ 1.10£
Quantity U.P
1 - 4 1.02£ 1.22£
5 - 9 0.97£ 1.16£
10 - 17 0.92£ 1.10£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 17
Set of 1

P-channel transistor, 6.8A, 500uA, TO-220, TO-220AB, 100V - IRF9520. P-channel transistor, 6.8A, 500uA, TO-220, TO-220AB, 100V. ID (T=25°C): 6.8A. Idss (max): 500uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 390pF. Cost): 170pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 98 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 27A. ID (T=100°C): 4.8A. IDss (min): 100uA. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 0.6 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 9.6 ns. Technology: HEXFET Power-MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 20/04/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 112
IRF9530

IRF9530

P-channel transistor, 12A, 500uA, TO-220, TO-220AB, 100V. ID (T=25°C): 12A. Idss (max): 500uA. Hous...
IRF9530
P-channel transistor, 12A, 500uA, TO-220, TO-220AB, 100V. ID (T=25°C): 12A. Idss (max): 500uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 860pF. Cost): 340pF. Channel type: P. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 48A. ID (T=100°C): 8.2A. IDss (min): 100uA. Pd (Power Dissipation, Max): 88W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
IRF9530
P-channel transistor, 12A, 500uA, TO-220, TO-220AB, 100V. ID (T=25°C): 12A. Idss (max): 500uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 860pF. Cost): 340pF. Channel type: P. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 48A. ID (T=100°C): 8.2A. IDss (min): 100uA. Pd (Power Dissipation, Max): 88W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
1.36£ VAT incl.
(1.13£ excl. VAT)
1.36£

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