FET and MOSFET transistors

P-channel transistor, 6mA, 6mA, TO-18 ( TO-206 ), TO-18. ID (T=25°C): 6mA. Idss (max): 6mA. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Quantity per case: 1. Function: P-FET S. Assembly/installation: PCB through-hole mounting

P-channel transistor, PCB soldering, TO-3P, -160V, -8A. Housing: PCB soldering. Housing: TO-3P. Drain-source voltage Uds [V]: -160V. Drain Current Id [A] @ 25°C: -8A. RoHS: no. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: J119. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -4A. Gate breakdown voltage Ugs [V]: -5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 90 ns. Ciss Gate Capacitance [pF]: 1050pF. Maximum dissipation Ptot [W]: 100W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 5A, 5A, TO-220FP, TO-220FP, 250V. ID (T=25°C): 5A. Idss (max): 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 250V. C(in): 800pF. Cost): 250pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 205 ns. Type of transistor: MOSFET. Function: 'Enhancement Mode Low Drain-Source On Resistance'. G-S Protection: yes. Id(imp): 20A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 1 Ohm. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 35 ns. Technology: Silicon P Chanel Mos Fet. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V

P-channel transistor, 8A, 10mA, TO-247, TO-247, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. C(in): 500pF. Cost): 300pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: AUDIO POWER MOSFET. G-S Protection: no. IDss (min): 10mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) ALF08N20V. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Gate/source voltage Vgs: 14V

ROHS: Yes. Housing: SOT23. Assembly/installation: SMD. Type of transistor: P-MOSFET. Polarity: unipolar. Number of outputs: 1. Technology: MOSFET. Drain-source voltage: -30V. Drain current: -4.2A. On-state resistance: 42m Ohms. Gate-source voltage: ±12V. Charge: 9.4nC

P-channel transistor, 9.2A, 50uA, SO, SO-8, 30 v. ID (T=25°C): 9.2A. Idss (max): 50uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 2060pF. Cost): 370pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 60A. ID (T=100°C): 7.4A. IDss (min): 10uA. Note: screen printing/SMD code 4407A. Number of terminals: 8. Pd (Power Dissipation, Max): 1.7W. On-resistance Rds On: 0.0085 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 11 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1.7V

P-channel transistor, 12.5A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 12.5A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 2330pF. Cost): 480pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: FET. Function: Switching or PWM applications. G-S Protection: yes. Id(imp): 60A. ID (T=100°C): 10.5A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 3W. On-resistance Rds On: 0.0094 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 49.5 ns. Td(on): 12.8 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1.7V

Housing: SO8. Assembly/installation: SMD. Type of transistor: P-MOSFET x2. Polarity: unipolar. Drain-source voltage: -30V. Drain current: -7A. On-state resistance: 18m Ohms. Gate-source voltage: ±25V. Charge: 30nC. Power: 1.3W. Channel type: 'enhanced'

P-channel transistor, 85A, 5uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=25°C): 85A. Idss (max): 5uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. C(in): 4360pF. Cost): 1050pF. Channel type: P. Conditioning: roll. Conditioning unit: 2500. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 39.5 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 200A. ID (T=100°C): 65A. IDss (min): 0.01uA. Number of terminals: 2. Pd (Power Dissipation, Max): 100W. On-resistance Rds On: 5.1M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 51 ns. Td(on): 18 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V

P-channel transistor, 24A, 25uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 35V. ID (T=25°C): 24A. Idss (max): 25uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 35V. C(in): 990pF. Cost): 220pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 25 ns. Type of transistor: MOSFET. Function: fast Switching, DC/DC Converter. G-S Protection: no. Id(imp): 80A. ID (T=100°C): 15A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 31.25W. On-resistance Rds On: 0.036 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 10 ns. Technology: 'Enhancement Mode Power MOSFET'. Operating temperature: -55°C...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V

P-channel transistor, PCB soldering (SMD), SOT-223, -100V, -0.68A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -0.68A. RoHS: no. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP316. Drain current through resistor Rds [Ohm] @ Ids [A]: 2.2 Ohms @ -0.61A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-223, -250V, -0.26A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: -250V. Drain Current Id [A] @ 25°C: -0.26A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP92P. Drain current through resistor Rds [Ohm] @ Ids [A]: 12 Ohms @ -0.26A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 101 ns. Ciss Gate Capacitance [pF]: 104pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 8A, 10mA, TO-3 ( TO-204 ), TO-3, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Voltage Vds(max): 200V. C(in): 734pF. Cost): 300pF. Channel type: P. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. G-S Protection: no. Number of terminals: 2. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) BUZ901. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 120ns. Technology: P-Channel MOSFET Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.15V

P-channel transistor, 8A, 10mA, TO-247, TO-247, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. Pinout: 1 - G, 2 - S, 3 - D. C(in): 500pF. Cost): 300pF. Channel type: P. Drain-source protection : no. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. G-S Protection: no. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) ECX10N20. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Technology: P-Channel MOSFET Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.15V

P-channel transistor, 4.3A, 1uA, TSOP, SUPERSOT-6, 35V. ID (T=25°C): 4.3A. Idss (max): 1uA. Housing: TSOP. Housing (according to data sheet): SUPERSOT-6. Voltage Vds(max): 35V. C(in): 530pF. Cost): 105pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 16 ns. Type of transistor: MOSFET. Function: Inverters, Power Supplies. G-S Protection: no. Id(imp): 20A. IDss (min): 1uA. Note: screen printing/SMD code 365P. Marking on the case: 365 P. Number of terminals: 6. Pd (Power Dissipation, Max): 1.6W. On-resistance Rds On: 0.045 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 7 ns. Technology: PowerTrench® MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

P-channel transistor, 4A, 10uA, TSOP, SUPERSOT-6, 20V. ID (T=25°C): 4A. Idss (max): 10uA. Housing: TSOP. Housing (according to data sheet): SUPERSOT-6. Voltage Vds(max): 20V. C(in): 700pF. Cost): 110pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: Load Switch, Battery Protection. G-S Protection: yes. Id(imp): 20A. IDss (min): 1uA. Note: screen printing/SMD code 642. Marking on the case: 642. Number of terminals: 6. Pd (Power Dissipation, Max): 1.6W. On-resistance Rds On: 0.045 Ohms. RoHS: yes. Spec info: Low Input Charge. Assembly/installation: surface-mounted component (SMD). Td(off): 120ns. Td(on): 6 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.4V

P-channel transistor, 1.6A, 0.1uA, SOT-23 ( TO-236 ), SOT-23, 20V. ID (T=25°C): 1.6A. Idss (max): 0.1uA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Voltage Vds(max): 20V. C(in): 451pF. Cost): 75pF. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: Battery management. Id(imp): 5A. IDss (min): n/a. Note: screen printing/SMD code 338. Pd (Power Dissipation, Max): 0.5W. On-resistance Rds On: 0.088 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 16 ns. Td(on): 10 ns. Technology: Specified PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.4V

P-channel transistor, 9A, 10uA, SO, SO-8, 30 v. ID (T=25°C): 9A. Idss (max): 10uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 2010pF. Cost): 590pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 36ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 100 ns. Td(on): 12 ns. Technology: P-channel. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

P-channel transistor, 8.8A, 1uA, SO, SO-8, 30 v. ID (T=25°C): 8.8A. Idss (max): 1uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 1385pF. Cost): 275pF. Channel type: P. Drain-source protection : no. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: battery charge controller. G-S Protection: yes. Id(imp): 50A. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.016 Ohms. RoHS: yes. Spec info: HBM ESD protection level of 3.8kV. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 10 ns. Technology: P-channel. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

P-channel transistor, PCB soldering (SMD), SO8, -30V, -11A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -11A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.013 Ohms @ -11A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 200 ns. Ciss Gate Capacitance [pF]: 2470pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 5.3A, 100nA, SO, SO-8, 30 v. ID (T=25°C): 5.3A. Idss (max): 100nA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 528pF. Cost): 132pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.042 Ohms. RoHS: yes. Spec info: VGS(th) 1V...3V, ID=250uA. Assembly/installation: surface-mounted component (SMD). Td(off): 14 ns. Td(on): 7 ns. Technology: P-Channel PowerTrench MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V

P-channel transistor, 27A, 10uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 60V. ID (T=25°C): 27A. Idss (max): 10uA. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 60V. C(in): 1100pF. Cost): 510pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 105 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 102A. ID (T=100°C): 19.1A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 120W. On-resistance Rds On: 0.055 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 18 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) min.: 2V

P-channel transistor, PCB soldering, TO-220AB, -55V, -74A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -74A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF4905. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -38A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 61 ns. Ciss Gate Capacitance [pF]: 3400pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V, PCB soldering (SMD), D²-PAK, TO-263, -55V, -64A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -64A. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 61 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F4905S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -38A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 31A, 250uA, TO-220, TO-220AB, 55V. ID (T=25°C): 31A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1200pF. Cost): 520pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 71 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 110A. ID (T=100°C): 22A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.06 Ohms. RoHS: yes. Spec info: Dynamic dv/dt Rating. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V