Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.15£ | 3.78£ |
5 - 9 | 2.99£ | 3.59£ |
10 - 24 | 2.84£ | 3.41£ |
25 - 49 | 2.68£ | 3.22£ |
50 - 99 | 2.62£ | 3.14£ |
100 - 143 | 2.42£ | 2.90£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.15£ | 3.78£ |
5 - 9 | 2.99£ | 3.59£ |
10 - 24 | 2.84£ | 3.41£ |
25 - 49 | 2.68£ | 3.22£ |
50 - 99 | 2.62£ | 3.14£ |
100 - 143 | 2.42£ | 2.90£ |
N-channel transistor, 21A, 30A, 250uA, 0.075 Ohms, TO-247, TO-247AC, 200V - IRFP250N. N-channel transistor, 21A, 30A, 250uA, 0.075 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 2159pF. Cost): 315pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 186 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 60.4k Ohms. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 214W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 19/04/2025, 16:25.
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