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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 8A, TO-220, 160V - BDX54F

NPN-Transistor, 8A, TO-220, 160V - BDX54F
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.58£ 1.90£
5 - 5 1.50£ 1.80£
Quantity U.P
1 - 4 1.58£ 1.90£
5 - 5 1.50£ 1.80£
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Quantity in stock : 5
Set of 1

NPN-Transistor, 8A, TO-220, 160V - BDX54F. NPN-Transistor, 8A, TO-220, 160V. Collector current: 8A. Housing: TO-220. Collector/emitter voltage Vceo: 160V. BE resistor: R1 typ. Darlington transistor?: yes. Semiconductor material: silicon. FT: 20 MHz. Function: Complementary power Darlington transistors. Minimum hFE gain: 750. Ic(pulse): 12A. Pd (Power Dissipation, Max): 60W. Type of transistor: PNP. Vcbo: 160V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V. Quantity per case: 1. Spec info: complementary transistor (pair) BDX53F. BE diode: no. CE diode: yes. Quantity in stock updated on 21/04/2025, 07:25.

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Quantity in stock : 619
BDX54C

BDX54C

NPN-Transistor, 8A, TO-220, TO-220AB, 50V. Collector current: 8A. Housing: TO-220. Housing (accordin...
BDX54C
NPN-Transistor, 8A, TO-220, TO-220AB, 50V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 50V. Conditioning: plastic tube. Darlington transistor?: yes. Semiconductor material: silicon. FT: 20 MHz. Production date: 2014/32. Minimum hFE gain: 750. Ic(pulse): 12A. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Complementary power Darlington transistors. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V. Resistor B: Darlington Power Transistor. BE resistor: Darlington transistor. C(in): -100V. Cost): -8A. Number of terminals: 3. Quantity per case: 1. Note: complementary transistor (pair) BDX53C. Conditioning unit: 50. Function: audio amplifier. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. BE diode: no. CE diode: yes
BDX54C
NPN-Transistor, 8A, TO-220, TO-220AB, 50V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 50V. Conditioning: plastic tube. Darlington transistor?: yes. Semiconductor material: silicon. FT: 20 MHz. Production date: 2014/32. Minimum hFE gain: 750. Ic(pulse): 12A. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Complementary power Darlington transistors. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V. Resistor B: Darlington Power Transistor. BE resistor: Darlington transistor. C(in): -100V. Cost): -8A. Number of terminals: 3. Quantity per case: 1. Note: complementary transistor (pair) BDX53C. Conditioning unit: 50. Function: audio amplifier. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. BE diode: no. CE diode: yes
Set of 1
0.78£ VAT incl.
(0.65£ excl. VAT)
0.78£

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