NPN transistor, 100V, TO220, 8A, TO-220, TO-220AB, 100V - BDX53C

NPN transistor, 100V, TO220, 8A, TO-220, TO-220AB, 100V - BDX53C. NPN transistor, 100V, TO220, 8A, TO-220, TO-220AB, 100V. Collector-Emitter Voltage VCEO: 100V. Housing: TO220. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. Polarity: NPN. Type: Darlington transistor. Power: 60W. DC Collector/Base Gain hFE min.: 750. Collector-Base Voltage VCBO: 100V. Mounting Type: PCB through-hole mounting. Current Max 1: 8A. Series: BDX53. MSL: +150°C. Max.Voltage IGBT VRSM: silicon. Information: 20 MHz. Minimum hFE gain: 750. Ic(pulse): 12A. Note: complementary transistor (pair) BDX54C. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Complementary power Darlington transistors. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V. Bandwidth MHz: 50. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 25/07/2025, 16:25.