Zener diodes

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 27V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: 'Glass Silicon Zener Diode'. MRI (max): 0.1uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 2.4V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Equivalents: 1N5221B, BZX79C2V4, ZPD2.4. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 2.7V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 30 v. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5256B, BZX55C30, ZPD30. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Zener voltage: 33V. Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5257B, BZX79C33, ZPD33. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 36V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: BZX79-C36, ZPD36, BZX55C36. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Zener voltage: 39V. Housing: DO-35. Diode type: Zener diode. Power: 0.5W

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 3V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 3.3V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5226B, BZX79C3V3, ZPD3.3. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 3.6V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5227B, BZX79C3V6, ZPD3.6. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 3.9V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5228B, BZX79C3V9, ZPD3.9. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Zener voltage: 43V. Housing: DO-35. Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Diode type: Zener diode. Power: 0.5W. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 47V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 4.3V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5229B, BZX79C4V3, ZPD4.3. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 4.7V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5230B, BZX79C4V7, ZPD4.7. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 51V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 5.1V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. MRI (max): 0.1uA. Equivalents: 1N5231B, BZX79C5V1, ZPD5.1. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 5.6V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5232B, BZX79C5V6, ZPD5.6. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 62V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 6.2V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. MRI (max): 0.1uA. Equivalents: 1N5234B, BZX79C6V2, ZPD6.2. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 6.8V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5235B, BZX79C6V8, ZPD6.8. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 7.5V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5236B, BZX79C7V5, ZPD7.5. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 8.2V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. Equivalents: 1N5237B, BZX79C8V2, ZPD8.2. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%

Pd (Power Dissipation, Max): 0.5W. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Zener voltage: 9.1V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Zener diode. MRI (max): 2uA. MRI (min): 0.1uA. Equivalents: 1N5239B, BZX79C9V1, ZPD9.1. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tolerance: 5%. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V

Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Zener breakdown voltage Uz [V], nom.: 5.1V. Maximum dissipation Ptot [W]: 0.25W. RoHS: yes. Component family: zener diode, SMD mounting, max 250mW. Configuration: surface-mounted component (SMD). Number of terminals: 3. Leakage current on closing Ir [A] @ Ur [V]: 2uA @ 2V. Zener Impedance Zzt[Ohm] @ Iz[A]: 400 Ohms @ 1mA. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C