In stock
Yangjie Electronic Technology
Yangjie Electronic Technology YJB110G10B N-Channel Power MOSFET 100V 110A Rds(on) 0.0052 Ohm TO-263
Product reference : YJB110G10B
Volume discounts — Save when you buy
| Quantity | Unit price | Save |
|---|---|---|
| 1 – 4 | 1.90 £ | — |
| 5 – 9 | 1.60 £ | -16% |
| 10 – 19 | 1.48 £ | -22% |
| 20 – 49 | 1.37 £ | -28% |
| 50 – 99 | 1.29 £ | -32% |
| 100 – 799 | 1.26 £ | -34% |
| 800+Best price | 1.26 £ | -34% |
Technical specifications
6 parameters| Parameter | Value |
| Type | MOSFET |
| Voltage | 100 V |
| Current | 110.0 A |
| Package | TO-263 |
| Resistance (RDSon) | 0.0052 Ohm |
Technical description of the product (YJB110G10B):
The YJB110G10B is a high-performance MOSFET manufactured by Yangjie Electronic Technology. This (YET) N-POWERFET features 100V, 110A, and an Rds(on) of 0.0052 Ohm, encapsulated in a TO-263 (D2PAK) package. It is suitable for power management, DC-DC converters, and motor drive applications.<br><br>