Toshiba 2SK2662 N-Channel MOSFET, 500V, 5A, 1.35 Ohm, TO-220FP Package

Technical description of the product (2SK2662):

Drain-Source Voltage Vds(max): 500V. Drain-Source Leakage Current Idss(max): 100uA. Continuous Drain Current Id (T=25°C): 5A. On-State Resistance Rds(On): 1.35 Ohms. Package (according to datasheet): TO-220FP. Package: TO-220FP. RoHS Compliant: Yes. Number of Pins: 3. Mounting Type: Through-hole. Channel Type: N. Transistor Type: MOSFET. Function: High Speed Switching, Zener-Protected. Technology: Field Effect Transistor (TT-MOS V). Gate-Source Protection: Yes. Turn-off Delay Time Td(off): 60 ns. Turn-on Delay Time Td(on): 25 ns. Quantity per Package: 1. Pulsed Drain Current Id(imp): 20A. Package Marking: K2662. Gate-Source Threshold Voltage Vgs(th) min.: 2V. Input Capacitance C(in): 780pF. Output Capacitance C(out): 200pF. Diode Reverse Recovery Time Trr (Min.): 1400 ns. Maximum Power Dissipation: 35W. Drain-Source Protection: Diode. Gate-Source Voltage Vgs: 30V. Gate-Source Threshold Voltage Vgs(th) max.: 4V. Temperature: +150°C.