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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 7A, 11A, 10uA, 0.4 Ohms, TO-220FP, TO-220FP, 600V - STP11NM60FP

N-channel transistor, 7A, 11A, 10uA, 0.4 Ohms, TO-220FP, TO-220FP, 600V - STP11NM60FP
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Quantity excl. VAT VAT incl.
1 - 4 3.36£ 4.03£
5 - 9 3.19£ 3.83£
10 - 24 3.03£ 3.64£
25 - 49 2.86£ 3.43£
50 - 99 2.79£ 3.35£
100+ 2.62£ 3.14£
Quantity U.P
1 - 4 3.36£ 4.03£
5 - 9 3.19£ 3.83£
10 - 24 3.03£ 3.64£
25 - 49 2.86£ 3.43£
50 - 99 2.79£ 3.35£
100+ 2.62£ 3.14£
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 7A, 11A, 10uA, 0.4 Ohms, TO-220FP, TO-220FP, 600V - STP11NM60FP. N-channel transistor, 7A, 11A, 10uA, 0.4 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1000pF. Cost): 230pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 44A. IDss (min): 1uA. Temperature: +150°C. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 20 ns. Technology: MDmesh Power MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. G-S Protection: no. Quantity in stock updated on 20/04/2025, 22:25.

Technical documentation

Equivalent products :

Quantity in stock : 17
STF11NM60ND

STF11NM60ND

N-channel transistor, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 6.3A. ID...
STF11NM60ND
N-channel transistor, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.37 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 40A. IDss (min): 1uA. Marking on the case: 11NM60ND. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Drain-source protection : yes. G-S Protection: no
STF11NM60ND
N-channel transistor, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.37 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 40A. IDss (min): 1uA. Marking on the case: 11NM60ND. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Drain-source protection : yes. G-S Protection: no
Set of 1
4.25£ VAT incl.
(3.54£ excl. VAT)
4.25£
Quantity in stock : 39
STP13NM60N

STP13NM60N

N-channel transistor, 6.93A, 11A, 100uA, 0.28 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 6.93A. ID (...
STP13NM60N
N-channel transistor, 6.93A, 11A, 100uA, 0.28 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 6.93A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.28 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 790pF. Cost): 60pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: Low input capacitance and gate charge. Id(imp): 44A. IDss (min): 1uA. Marking on the case: 13NM60N. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: ID pulse 44A. G-S Protection: no
STP13NM60N
N-channel transistor, 6.93A, 11A, 100uA, 0.28 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 6.93A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.28 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 790pF. Cost): 60pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: Low input capacitance and gate charge. Id(imp): 44A. IDss (min): 1uA. Marking on the case: 13NM60N. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: ID pulse 44A. G-S Protection: no
Set of 1
2.26£ VAT incl.
(1.88£ excl. VAT)
2.26£

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