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N-channel transistor, 20A, TO-247, TO-247-3, 1350V - IHW20N135R3

N-channel transistor, 20A, TO-247, TO-247-3, 1350V - IHW20N135R3
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Quantity excl. VAT VAT incl.
1 - 1 5.02£ 6.02£
2 - 2 4.76£ 5.71£
3 - 4 4.61£ 5.53£
5 - 9 4.51£ 5.41£
10 - 19 4.41£ 5.29£
20 - 20 4.26£ 5.11£
Quantity U.P
1 - 1 5.02£ 6.02£
2 - 2 4.76£ 5.71£
3 - 4 4.61£ 5.53£
5 - 9 4.51£ 5.41£
10 - 19 4.41£ 5.29£
20 - 20 4.26£ 5.11£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 20
Set of 1

N-channel transistor, 20A, TO-247, TO-247-3, 1350V - IHW20N135R3. N-channel transistor, 20A, TO-247, TO-247-3, 1350V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247-3. Collector/emitter voltage Vceo: 1350V. C(in): 1500pF. Cost): 55pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: Inductive?cooking. Germanium diode: no. Collector current: 40A. Ic(pulse): 60A. Marking on the case: H20R1353. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. RoHS: yes. Spec info: Reverse conducting IGBT with monolithic body diode. Assembly/installation: PCB through-hole mounting. Td(off): 405 ns. Td(on): 335 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.6V. Maximum saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 07/06/2025, 21:25.

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