STMicroelectronics STP11NM80 N-Channel MDmesh MOSFET, 800V, 11A, TO-220

Technical description of the product (STP11NM80):

Drain-Source Voltage Vds(max): 800V. Drain-Source Leakage Current Idss (max): 100uA. Drain Current Id (T=25°C): 11A. Drain Current Id (T=100°C): 4.7A. On-State Resistance Rds On: 0.35 Ohms. Package (according to datasheet): TO-220. Package: TO-220. RoHS: yes. Operating Temperature: -65...+150°C. Number of Pins: 3. Mounting/Installation: Through-hole mounting for PCB. Channel Type: N. Transistor Type: MOSFET. Function: Low input capacitance, resistance and gate charge. Technology: MDmesh MOSFET. Gate-Source Protection: no. Turn-off Delay Time Td(off): 46 ns. Drain-Source Leakage Current Idss (min): 10uA. Turn-on Delay Time Td(on): 22 ns. Quantity per Package: 1. Pulsed Drain Current Id(imp): 44A. Marking on Package: P11NM80. Gate-Source Threshold Voltage Vgs(th) min.: 3V. Input Capacitance C (in): 1630pF. Output Capacitance C (out): 750pF. Diode Reverse Recovery Time Trr (Min.): 612 ns. Max Power Dissipation: 150W. Packaging: Plastic tube. Drain-Source Protection: Zener diode. Gate-Source Voltage Vgs: 30V. Packaging Unit: 50