Standard and Rectifier Diodes

Housing: SOD123. VRRM: 40V. Average Rectified Current per Diode: 3A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.50V / 3A. Mounting Type: SMD. Reverse Leakage Current: 200uA / 40V. Series: SKL

Forward current (AV): 165A. IFSM: 2500A. Housing: DO-205. Housing (according to data sheet): DO-205. VRRM: 1200V. Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: All-purpose power rectifier. Note: M12 thread, 8.2mm eyelet. Number of terminals: 1. Spec info: Threaded housing--Anode, (high current). Assembly/installation: Threaded fastening. Operating temperature: -40...+180°C. Threshold voltage Vf (max): 1.5V

Housing: SOD-123FL. VRRM: 1000V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.1V / 1A. Mounting Type: SMD. Reverse Leakage Current: <50uA / 1000V. Reverse Recovery Time (Max): 1500ns. Series: SL1

Housing: DO-213AB (MELF). VRRM: 2000V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.1V / 1A. Mounting Type: SMD. Reverse Leakage Current: <50uA / 2000V. Reverse Recovery Time (Max): 1500ns. Series: SM40

Housing: DO213AB (MELF). VRRM: 40V. Average Rectified Current per Diode: 5A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.50V / 5A. Mounting Type: SMD. Reverse Leakage Current: 90uA / 40V. Information: 3rd Gen. Series: SMS

Housing: DO213AB (MELF). VRRM: 60V. Average Rectified Current per Diode: 5A. Diode type: schottky. Diode Configuration: independent. Mounting Type: SMD. Reverse Leakage Current: 80uA / 60V. Information: 3rd Gen. Series: SMS

Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.5x4.8mm ). VRRM: 20V. Semiconductor material: Sb. Note: HIGH CURRENT SCHOTTKY BARRIER RECTIFIER. Number of terminals: 2. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting

Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.5x4.8mm ). VRRM: 60V. Semiconductor material: Sb. Note: HIGH CURRENT SCHOTTKY BARRIER RECTIFIER. Number of terminals: 2. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting

Forward current (AV): 8A. IFSM: 200A. Housing: TO-220. Housing (according to data sheet): TO-220. VRRM: 40V. Cj: 700pF. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Number of terminals: 3. RoHS: yes. Spec info: Ifsm--200Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V

Forward current (AV): 2A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x6.7mm ). VRRM: 40V. Cj: 110pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. MRI (max): 20mA. MRI (min): 1mA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--50Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V

Forward current (AV): 2A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x6.7mm ). VRRM: 50V. Semiconductor material: Sb. Note: Vf 0.70V. Note: 50App/8.3ms. Number of terminals: 2. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting

Forward current (AV): 2A. Forward current (RMS): 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x6.7mm ). VRRM: 60V. Cj: 170pF. Semiconductor material: Sb. MRI (max): 10mA. MRI (min): 1mA. Number of terminals: 2. Schottky diode?: schottky. Spec info: 50App / 8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.70V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 5.3x9.0mm ). VRRM: 40V. Cj: 200pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. MRI (max): 10mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--80Ap, t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 5.3x9.0mm ). VRRM: 60V. Cj: 130pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--80Ap, t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.7V. Forward voltage Vf (min): 0.7V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 5.3x9.0mm ). VRRM: 100V. Cj: 72pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. MRI (max): 2mA. MRI (min): 0.1mA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--80Ap, t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.85V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 5.3x9.0mm ). VRRM: 150V. Cj: 72pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): ns. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. MRI (max): 2mA. MRI (min): 0.1mA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--80Ap, t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65°C...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V

Forward current (AV): 5A. Forward current (RMS): 150Ap / 8.3ms. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 60V. Cj: 380pF. Semiconductor material: Sb. Note: RMS Rew--42V. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.7V

Forward current (AV): 5A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD DO-27 ( 5.2x9mm ). VRRM: 100V. Cj: 400pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Function: Schottky rectifier diode. Marking on the case: SR5100. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 150Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.85V

Forward current (AV): 5A. Forward current (RMS): 120Ap / 8.3ms. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 20V. Cj: 250pF. Semiconductor material: Sb. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.55V

Forward current (AV): 5A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 4.5x7.5mm ). VRRM: 200V. Cj: 175pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Function: Schottky rectifier diode. Marking on the case: SR5200. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 150Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 0.95V

Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.5x2.79mm ). VRRM: 40V. Cj: 100pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. MRI (max): 20mA. MRI (min): 1mA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.6V. Forward voltage Vf (min): 0.55V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): DO-214AA (SMB) 4.57x3.94mm. VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky Barrier Rectifier Diode, Surface Mount. MRI (max): 20mA. MRI (min): 500uA. Marking on the case: SS34. Equivalents: SS34B. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap (tp=8.3ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (SMC) 7.11x6.22mm. VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky Barrier Rectifier Diode, Surface Mount. MRI (max): 20mA. MRI (min): 500uA. Marking on the case: SS34. Equivalents: SS34-E3/9AT. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (t=8.3ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V

Forward current (AV): 3A. IFSM: 80A. Housing: SOD-123. Housing (according to data sheet): 425AB SMA (3.8x1.9mm). VRRM: 40V. Cj: 152pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 12 ns. Semiconductor material: Sb. Function: Schottky Barrier Rectifier Diode, Surface Mount. Note: screen printing/SMD code 34L. MRI (max): 60mA. MRI (min): 500uA. Marking on the case: 34L. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap (tp=8.3ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.5V

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (SMA) 7.11x6.22mm. VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky Barrier Rectifier Diode, Surface Mount. MRI (max): 10mA. MRI (min): 500uA. Marking on the case: SS36. Equivalents: SS36-E3/9AT. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (t=8.3ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.75V