P-channel transistor, 8.8A, 1uA, TO-220, PG-TO220-3, 60V - SPP08P06P

Quantity	excl. VAT	VAT incl.
1 - 4	2.00£	2.40£
5 - 9	1.90£	2.28£
10 - 24	1.80£	2.16£
25 - 49	1.70£	2.04£
50 - 99	1.66£	1.99£
100 - 249	1.62£	1.94£
250+	1.54£	1.85£

Quantity	U.P
1 - 4	2.00£	2.40£
5 - 9	1.90£	2.28£
10 - 24	1.80£	2.16£
25 - 49	1.70£	2.04£
50 - 99	1.66£	1.99£
100 - 249	1.62£	1.94£
250+	1.54£	1.85£

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

P-channel transistor, 8.8A, 1uA, TO-220, PG-TO220-3, 60V - SPP08P06P. P-channel transistor, 8.8A, 1uA, TO-220, PG-TO220-3, 60V. ID (T=25°C): 8.8A. Idss (max): 1uA. Housing: TO-220. Housing (according to data sheet): PG-TO220-3. Voltage Vds(max): 60V. C(in): 335pF. Cost): 105pF. Channel type: P. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Id(imp): 32.5A. ID (T=100°C): 6.2A. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.23 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 16 ns. Technology: SIPMOS Power-Transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Function: Enhancement mode, avalanche rated, dv/dt rated. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 03:25.

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