Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 10.24£ | 12.29£ |
2 - 2 | 9.73£ | 11.68£ |
3 - 4 | 9.52£ | 11.42£ |
5 - 9 | 9.22£ | 11.06£ |
10 - 14 | 9.01£ | 10.81£ |
15 - 19 | 10.82£ | 12.98£ |
20 - 112 | 10.74£ | 12.89£ |
Quantity | U.P | |
---|---|---|
1 - 1 | 10.24£ | 12.29£ |
2 - 2 | 9.73£ | 11.68£ |
3 - 4 | 9.52£ | 11.42£ |
5 - 9 | 9.22£ | 11.06£ |
10 - 14 | 9.01£ | 10.81£ |
15 - 19 | 10.82£ | 12.98£ |
20 - 112 | 10.74£ | 12.89£ |
NPN-Transistor, TO-3 ( TO-204 ), TO-3, 120V, TO3, -120V - MJ11015G. NPN-Transistor, TO-3 ( TO-204 ), TO-3, 120V, TO3, -120V. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. Housing: TO3. Collector-Emitter Voltage VCEO: -120V. RoHS: yes. Note: 8k Ohms (R1), 40 Ohms (R2). Number of terminals: 2. Pd (Power Dissipation, Max): 200W. Spec info: complementary transistor (pair) MJ11016. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Type: Darlington transistor. Polarity: PNP. Power: 200W. Collector-Base Voltage VCBO: -120V. Mounting Type: Chassis Mount. Bandwidth MHz: 4MHz. DC Collector/Base Gain hFE min.: 200. Current Max 1: -30A. Max.Voltage IGBT VRSM: hFE 1000 (IC=20Adc, VCE=5Vdc). Series: MJ11015G. MSL: 30A. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 25/07/2025, 17:25.
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