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P-channel transistor, 7A, 5uA, SO, SO-8, 30 v - SI4435BDY

P-channel transistor, 7A, 5uA, SO, SO-8, 30 v - SI4435BDY
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Quantity excl. VAT VAT incl.
1 - 4 0.58£ 0.70£
5 - 9 0.55£ 0.66£
10 - 24 0.52£ 0.62£
25 - 49 0.49£ 0.59£
50 - 99 0.48£ 0.58£
100 - 249 0.47£ 0.56£
250 - 2093 0.45£ 0.54£
Quantity U.P
1 - 4 0.58£ 0.70£
5 - 9 0.55£ 0.66£
10 - 24 0.52£ 0.62£
25 - 49 0.49£ 0.59£
50 - 99 0.48£ 0.58£
100 - 249 0.47£ 0.56£
250 - 2093 0.45£ 0.54£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2093
Set of 1

P-channel transistor, 7A, 5uA, SO, SO-8, 30 v - SI4435BDY. P-channel transistor, 7A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 7A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. ID (T=100°C): 5.6A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 110 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Quantity in stock updated on 06/05/2025, 06:25.

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