P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V - SI4401BDY

P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V - SI4401BDY. P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V. ID (T=25°C): 8.7A. Idss (max): 10uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 40V. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 35ms. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. ID (T=100°C): 5.9A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 16 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity in stock updated on 06/05/2025, 05:25.