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P-channel transistor, 8.8A, 500uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V - IRFU9024

P-channel transistor, 8.8A, 500uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V - IRFU9024
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Quantity excl. VAT VAT incl.
1 - 4 1.62£ 1.94£
5 - 9 0.96£ 1.15£
10 - 24 0.82£ 0.98£
25 - 49 0.75£ 0.90£
50 - 50 0.68£ 0.82£
Quantity U.P
1 - 4 1.62£ 1.94£
5 - 9 0.96£ 1.15£
10 - 24 0.82£ 0.98£
25 - 49 0.75£ 0.90£
50 - 50 0.68£ 0.82£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 50
Set of 1

P-channel transistor, 8.8A, 500uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V - IRFU9024. P-channel transistor, 8.8A, 500uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V. ID (T=25°C): 8.8A. Idss (max): 500uA. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 60V. C(in): 570pF. Cost): 360pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 35A. ID (T=100°C): 5.6A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer International Rectifier. Quantity in stock updated on 01/08/2025, 10:25.

Equivalent products :

Quantity in stock : 166
IRFR9024

IRFR9024

P-channel transistor, 8.8A, 500uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 60V. ID (T=25°C)...
IRFR9024
P-channel transistor, 8.8A, 500uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 60V. ID (T=25°C): 8.8A. Idss (max): 500uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 60V. C(in): 570pF. Cost): 360pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100us. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 35A. ID (T=100°C): 5.6A. IDss (min): 100uA. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
IRFR9024
P-channel transistor, 8.8A, 500uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 60V. ID (T=25°C): 8.8A. Idss (max): 500uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 60V. C(in): 570pF. Cost): 360pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100us. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 35A. ID (T=100°C): 5.6A. IDss (min): 100uA. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
Set of 1
0.89£ VAT incl.
(0.74£ excl. VAT)
0.89£

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