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Semiconductors Transistors FET and MOSFET transistors

P-channel transistor, 5.6A, 5.6A, D-PAK TO-252AA, 100V - IRFR9120

P-channel transistor, 5.6A, 5.6A, D-PAK TO-252AA, 100V - IRFR9120
Quantity excl. VAT VAT incl.
1 - 4 0.74£ 0.89£
5 - 9 0.70£ 0.84£
10 - 24 0.67£ 0.80£
25 - 49 0.63£ 0.76£
50 - 99 0.62£ 0.74£
100 - 249 0.60£ 0.72£
250+ 0.57£ 0.68£
Quantity U.P
1 - 4 0.74£ 0.89£
5 - 9 0.70£ 0.84£
10 - 24 0.67£ 0.80£
25 - 49 0.63£ 0.76£
50 - 99 0.62£ 0.74£
100 - 249 0.60£ 0.72£
250+ 0.57£ 0.68£
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

P-channel transistor, 5.6A, 5.6A, D-PAK TO-252AA, 100V - IRFR9120. P-channel transistor, 5.6A, 5.6A, D-PAK TO-252AA, 100V. ID (T=25°C): 5.6A. Idss (max): 5.6A. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=100°C): 3.6A. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.6 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET. Quantity in stock updated on 06/05/2025, 08:25.

Technical documentation

Equivalent products :

Quantity in stock : 17
IRFR9120N

IRFR9120N

P-channel transistor, 6.6A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V. ID (T=25°C...
IRFR9120N
P-channel transistor, 6.6A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V. ID (T=25°C): 6.6A. Idss (max): 250uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 100V. C(in): 350pF. Cost): 110pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 26A. ID (T=100°C): 4.2A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.48 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 14 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFR9120N
P-channel transistor, 6.6A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V. ID (T=25°C): 6.6A. Idss (max): 250uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 100V. C(in): 350pF. Cost): 110pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 26A. ID (T=100°C): 4.2A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.48 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 14 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.14£ VAT incl.
(0.95£ excl. VAT)
1.14£

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