N-channel transistor, 4A, 5.6A, 250uA, 0.54 Ohms, TO-220, TO-220AB, 100V - IRF510

Quantity	excl. VAT	VAT incl.
1 - 4	0.85£	1.02£
5 - 9	0.81£	0.97£
10 - 24	0.76£	0.91£
25 - 49	0.72£	0.86£
50 - 99	0.70£	0.84£
100 - 177	0.69£	0.83£

Quantity	U.P
1 - 4	0.85£	1.02£
5 - 9	0.81£	0.97£
10 - 24	0.76£	0.91£
25 - 49	0.72£	0.86£
50 - 99	0.70£	0.84£
100 - 177	0.69£	0.83£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 177

Set of 1

N-channel transistor, 4A, 5.6A, 250uA, 0.54 Ohms, TO-220, TO-220AB, 100V - IRF510. N-channel transistor, 4A, 5.6A, 250uA, 0.54 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 4A. ID (T=25°C): 5.6A. Idss (max): 250uA. On-resistance Rds On: 0.54 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 180pF. Cost): 81pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 20A. IDss (min): 25uA. Pd (Power Dissipation, Max): 43W. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 20/04/2025, 16:25.

Technical documentation