P-channel transistor, 1.8A, 500uA, DIP, DH-1 house, DIP-4, 60V - IRFD9024

P-channel transistor, 1.8A, 500uA, DIP, DH-1 house, DIP-4, 60V - IRFD9024. P-channel transistor, 1.8A, 500uA, DIP, DH-1 house, DIP-4, 60V. ID (T=25°C): 1.8A. Idss (max): 500uA. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 60V. C(in): 570pF. Cost): 360pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 100dB. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: FET. Function: High-speed switching. G-S Protection: no. Id(imp): 13A. ID (T=100°C): 1.1A. IDss (min): 100uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Spec info: Dynamic dv/dt Rating. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Quantity in stock updated on 06/05/2025, 08:25.