Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.17£ | 1.40£ |
5 - 9 | 1.11£ | 1.33£ |
10 - 24 | 1.05£ | 1.26£ |
25 - 49 | 0.99£ | 1.19£ |
50 - 99 | 0.97£ | 1.16£ |
100 - 249 | 0.86£ | 1.03£ |
250 - 645 | 0.82£ | 0.98£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.17£ | 1.40£ |
5 - 9 | 1.11£ | 1.33£ |
10 - 24 | 1.05£ | 1.26£ |
25 - 49 | 0.99£ | 1.19£ |
50 - 99 | 0.97£ | 1.16£ |
100 - 249 | 0.86£ | 1.03£ |
250 - 645 | 0.82£ | 0.98£ |
P-channel transistor, 19A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V - IRF9Z34NS. P-channel transistor, 19A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=25°C): 19A. Idss (max): 250uA. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. C(in): 620pF. Cost): 280pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 54ms. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. G-S Protection: no. Id(imp): 68A. ID (T=100°C): 14A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 68W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity in stock updated on 06/05/2025, 09:25.
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