Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.00£ | 1.20£ |
5 - 9 | 0.95£ | 1.14£ |
10 - 24 | 0.90£ | 1.08£ |
25 - 49 | 0.85£ | 1.02£ |
50 - 99 | 0.83£ | 1.00£ |
100 - 249 | 0.87£ | 1.04£ |
250 - 1283 | 0.80£ | 0.96£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.00£ | 1.20£ |
5 - 9 | 0.95£ | 1.14£ |
10 - 24 | 0.90£ | 1.08£ |
25 - 49 | 0.85£ | 1.02£ |
50 - 99 | 0.83£ | 1.00£ |
100 - 249 | 0.87£ | 1.04£ |
250 - 1283 | 0.80£ | 0.96£ |
P-channel transistor, PCB soldering (SMD), SO8, 1, -30V, -11A, SO, SO-8, 30 v - FDS6675BZ. P-channel transistor, PCB soldering (SMD), SO8, 1, -30V, -11A, SO, SO-8, 30 v. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): 1. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -11A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: Extended VGS range (-25V) for battery operated applications. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.013 Ohms @ -11A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 200 ns. Ciss Gate Capacitance [pF]: 2470pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Spec info: FDS6675BZ. Assembly/installation: surface-mounted component (SMD). Td(off): 120ns. Td(on): 3 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity in stock updated on 06/05/2025, 01:25.
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