P-channel transistor, 8.8A, 1uA, SO, SO-8, 30 v - FDS4435BZ

Quantity	excl. VAT	VAT incl.
1 - 4	1.13£	1.36£
5 - 9	1.07£	1.28£
10 - 24	1.02£	1.22£
25 - 49	0.96£	1.15£
50 - 99	0.94£	1.13£
100 - 139	0.92£	1.10£

Quantity	U.P
1 - 4	1.13£	1.36£
5 - 9	1.07£	1.28£
10 - 24	1.02£	1.22£
25 - 49	0.96£	1.15£
50 - 99	0.94£	1.13£
100 - 139	0.92£	1.10£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 139

Set of 1

P-channel transistor, 8.8A, 1uA, SO, SO-8, 30 v - FDS4435BZ. P-channel transistor, 8.8A, 1uA, SO, SO-8, 30 v. ID (T=25°C): 8.8A. Idss (max): 1uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 1385pF. Cost): 275pF. Channel type: P. Drain-source protection : no. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: battery charge controller. G-S Protection: yes. Id(imp): 50A. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.016 Ohms. RoHS: yes. Spec info: HBM ESD protection level of 3.8kV. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 10 ns. Technology: P-channel. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity in stock updated on 06/05/2025, 02:25.

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