Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 10.39£ | 12.47£ |
2 - 2 | 9.88£ | 11.86£ |
3 - 4 | 9.67£ | 11.60£ |
5 - 9 | 9.36£ | 11.23£ |
10 - 14 | 9.15£ | 10.98£ |
15 - 19 | 8.84£ | 10.61£ |
20+ | 8.52£ | 10.22£ |
Quantity | U.P | |
---|---|---|
1 - 1 | 10.39£ | 12.47£ |
2 - 2 | 9.88£ | 11.86£ |
3 - 4 | 9.67£ | 11.60£ |
5 - 9 | 9.36£ | 11.23£ |
10 - 14 | 9.15£ | 10.98£ |
15 - 19 | 8.84£ | 10.61£ |
20+ | 8.52£ | 10.22£ |
P-channel transistor, 12A, 1mA, TO-264 ( TOP-3L ), 2-21F1B, 200V - 2SJ201. P-channel transistor, 12A, 1mA, TO-264 ( TOP-3L ), 2-21F1B, 200V. ID (T=25°C): 12A. Idss (max): 1mA. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): 2-21F1B. Voltage Vds(max): 200V. C(in): 1500pF. Cost): 430pF. Channel type: P. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: High Power Amplifier Application. G-S Protection: no. Marking on the case: J201. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Silicon P-Channel MOS Type. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.8V. Gate/source voltage (off) min.: 0.8V. Original product from manufacturer Toshiba. Quantity in stock updated on 17/06/2025, 16:25.
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