P-channel transistor, 7A, 7A, TO-3P ( TO-218 SOT-93 ), TO-3P, 160V - 2SJ162
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 9.37£ | 11.24£ |
| 2 - 2 | 8.90£ | 10.68£ |
| 3 - 4 | 8.71£ | 10.45£ |
| 5 - 9 | 8.43£ | 10.12£ |
| 10 - 14 | 8.24£ | 9.89£ |
| 15 - 19 | 7.96£ | 9.55£ |
| 20+ | 7.68£ | 9.22£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 9.37£ | 11.24£ |
| 2 - 2 | 8.90£ | 10.68£ |
| 3 - 4 | 8.71£ | 10.45£ |
| 5 - 9 | 8.43£ | 10.12£ |
| 10 - 14 | 8.24£ | 9.89£ |
| 15 - 19 | 7.96£ | 9.55£ |
| 20+ | 7.68£ | 9.22£ |
P-channel transistor, 7A, 7A, TO-3P ( TO-218 SOT-93 ), TO-3P, 160V - 2SJ162. P-channel transistor, 7A, 7A, TO-3P ( TO-218 SOT-93 ), TO-3P, 160V. ID (T=25°C): 7A. Idss (max): 7A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 160V. C(in): 900pF. Cost): 400pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: Low-Frequency Power Amplifier. G-S Protection: yes. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 230 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 15V. Gate/source voltage (off) min.: 0.15V. Original product from manufacturer Renesas Technology. Quantity in stock updated on 17/06/2025, 11:25.
Equivalent products :
ECX10P20
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