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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, TO-92, 100mA, TO-92, 50V - BC557C

NPN-Transistor, TO-92, 100mA, TO-92, 50V - BC557C
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 4 0.35£ 0.42£
5 - 9 0.33£ 0.40£
10 - 24 0.31£ 0.37£
25 - 49 0.33£ 0.40£
50 - 99 0.39£ 0.47£
100 - 149 0.37£ 0.44£
150 - 964 0.35£ 0.42£
Quantity (Set of 10) U.P
1 - 4 0.35£ 0.42£
5 - 9 0.33£ 0.40£
10 - 24 0.31£ 0.37£
25 - 49 0.33£ 0.40£
50 - 99 0.39£ 0.47£
100 - 149 0.37£ 0.44£
150 - 964 0.35£ 0.42£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 9637
Set of 10

NPN-Transistor, TO-92, 100mA, TO-92, 50V - BC557C. NPN-Transistor, TO-92, 100mA, TO-92, 50V. Housing: TO-92. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Resistor B: PNP transistor. BE resistor: -50V. C(in): 10pF. Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.65V. Vebo: 5V. Spec info: complementary transistor (pair) BC547C. BE diode: no. CE diode: no. Quantity in stock updated on 19/04/2025, 18:25.

Technical documentation

Equivalent products :

Quantity in stock : 1086
BC556C

BC556C

NPN-Transistor, 100mA, TO-92, TO-92, 80V. Collector current: 100mA. Housing: TO-92. Housing (accordi...
BC556C
NPN-Transistor, 100mA, TO-92, TO-92, 80V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V. Spec info: complementary transistor (pair) BC546C
BC556C
NPN-Transistor, 100mA, TO-92, TO-92, 80V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V. Spec info: complementary transistor (pair) BC546C
Set of 10
1.08£ VAT incl.
(0.90£ excl. VAT)
1.08£

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