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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V - 2SC5200

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V - 2SC5200
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Quantity excl. VAT VAT incl.
1 - 1 6.02£ 7.22£
2 - 2 5.72£ 6.86£
3 - 4 5.42£ 6.50£
5 - 9 5.12£ 6.14£
10 - 19 5.00£ 6.00£
20 - 29 4.88£ 5.86£
30 - 214 4.69£ 5.63£
Quantity U.P
1 - 1 6.02£ 7.22£
2 - 2 5.72£ 6.86£
3 - 4 5.42£ 6.50£
5 - 9 5.12£ 6.14£
10 - 19 5.00£ 6.00£
20 - 29 4.88£ 5.86£
30 - 214 4.69£ 5.63£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 214
Set of 1

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V - 2SC5200. NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: C5200 (Q). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1943. BE diode: no. CE diode: no. Quantity in stock updated on 21/04/2025, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 143
MJL21194

MJL21194

NPN transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( T...
MJL21194
NPN transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21193. BE diode: no. CE diode: no
MJL21194
NPN transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21193. BE diode: no. CE diode: no
Set of 1
8.02£ VAT incl.
(6.68£ excl. VAT)
8.02£
Quantity in stock : 1
FJL4315-O

FJL4315-O

NPN transistor, 17A, TO-264 ( TOP-3L ), TO-264, 250V. Collector current: 17A. Housing: TO-264 ( TOP-...
FJL4315-O
NPN transistor, 17A, TO-264 ( TOP-3L ), TO-264, 250V. Collector current: 17A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 250V. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: J4315O. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) FJL4215-O
FJL4315-O
NPN transistor, 17A, TO-264 ( TOP-3L ), TO-264, 250V. Collector current: 17A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 250V. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: J4315O. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) FJL4215-O
Set of 1
5.82£ VAT incl.
(4.85£ excl. VAT)
5.82£
Quantity in stock : 21
2SC5242

2SC5242

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), 2-16C1A, 230V. Collector current: 15A. Housing: TO-3P ...
2SC5242
NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), 2-16C1A, 230V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): 2-16C1A. Collector/emitter voltage Vceo: 230V. Cost): 200pF. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 5. Marking on the case: C5242. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Spec info: complementary transistor (pair) 2SA1962. BE diode: no. CE diode: no
2SC5242
NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), 2-16C1A, 230V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): 2-16C1A. Collector/emitter voltage Vceo: 230V. Cost): 200pF. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 5. Marking on the case: C5242. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Spec info: complementary transistor (pair) 2SA1962. BE diode: no. CE diode: no
Set of 1
2.50£ VAT incl.
(2.08£ excl. VAT)
2.50£

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