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NPN transistor, 17A, TO-264 ( TOP-3L ), TO-264, 250V - FJL4315-O

NPN transistor, 17A, TO-264 ( TOP-3L ), TO-264, 250V - FJL4315-O
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Quantity excl. VAT VAT incl.
1 - 1 4.85£ 5.82£
Quantity U.P
1 - 1 4.85£ 5.82£
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Quantity in stock : 1
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NPN transistor, 17A, TO-264 ( TOP-3L ), TO-264, 250V - FJL4315-O. NPN transistor, 17A, TO-264 ( TOP-3L ), TO-264, 250V. Collector current: 17A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 250V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: J4315O. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) FJL4215-O. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Original product from manufacturer Fairchild. Quantity in stock updated on 06/06/2025, 03:25.

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NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: T...
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NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. BE diode: no. Cost): 200pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: C5200 (Q). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1943. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
2SC5200
NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. BE diode: no. Cost): 200pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: C5200 (Q). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1943. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
Set of 1
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(6.02£ excl. VAT)
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