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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 12A, TO-247, TO-247, 160V - 2SA1301

NPN-Transistor, 12A, TO-247, TO-247, 160V - 2SA1301
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Quantity excl. VAT VAT incl.
1 - 4 2.01£ 2.41£
5 - 9 1.91£ 2.29£
10 - 23 1.81£ 2.17£
Quantity U.P
1 - 4 2.01£ 2.41£
5 - 9 1.91£ 2.29£
10 - 23 1.81£ 2.17£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 23
Set of 1

NPN-Transistor, 12A, TO-247, TO-247, 160V - 2SA1301. NPN-Transistor, 12A, TO-247, TO-247, 160V. Collector current: 12A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC3280. Quantity in stock updated on 20/04/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 83
MJL1302A

MJL1302A

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-...
MJL1302A
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL3281A. BE diode: no. CE diode: no
MJL1302A
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL3281A. BE diode: no. CE diode: no
Set of 1
8.00£ VAT incl.
(6.67£ excl. VAT)
8.00£
Out of stock
2SA1302

2SA1302

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 200V. Collector current: 15A. Housing: TO-264 ( TOP-...
2SA1302
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 200V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC3281
2SA1302
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 200V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC3281
Set of 1
2.69£ VAT incl.
(2.24£ excl. VAT)
2.69£
Quantity in stock : 248
2SA1943

2SA1943

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: T...
2SA1943
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. Cost): 360pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: A1943 (O). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Vcbo: 230V. Saturation voltage VCE(sat): 1.5V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC5200. BE diode: no. CE diode: no
2SA1943
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. Cost): 360pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: A1943 (O). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Vcbo: 230V. Saturation voltage VCE(sat): 1.5V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC5200. BE diode: no. CE diode: no
Set of 1
6.32£ VAT incl.
(5.27£ excl. VAT)
6.32£

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Quantity in stock : 214
2SC5200

2SC5200

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: T...
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2SA1837

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