Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.22£ | 1.46£ |
5 - 9 | 1.16£ | 1.39£ |
10 - 24 | 1.10£ | 1.32£ |
25 - 49 | 1.03£ | 1.24£ |
50 - 99 | 1.01£ | 1.21£ |
100 - 112 | 0.92£ | 1.10£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.22£ | 1.46£ |
5 - 9 | 1.16£ | 1.39£ |
10 - 24 | 1.10£ | 1.32£ |
25 - 49 | 1.03£ | 1.24£ |
50 - 99 | 1.01£ | 1.21£ |
100 - 112 | 0.92£ | 1.10£ |
NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 80V - 2SB647. NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 200. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: B647. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD667. BE diode: no. CE diode: no. Quantity in stock updated on 20/04/2025, 15:25.
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