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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 12A, TO-220, TO-220, 400V - FJP13009

NPN transistor, 12A, TO-220, TO-220, 400V - FJP13009
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 3 1.95£ 2.34£
Quantity U.P
1 - 3 1.95£ 2.34£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 3
Set of 1

NPN transistor, 12A, TO-220, TO-220, 400V - FJP13009. NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. Cost): 180pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 17. Minimum hFE gain: 8. Ic(pulse): 24A. Marking on the case: J13009. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 21/04/2025, 07:25.

Technical documentation

Equivalent products :

Quantity in stock : 43
FJP13009H2

FJP13009H2

NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (accordi...
FJP13009H2
NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. Cost): 180pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 28. Minimum hFE gain: 15. Ic(pulse): 24A. Marking on the case: J13009-2. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
FJP13009H2
NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. Cost): 180pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 28. Minimum hFE gain: 15. Ic(pulse): 24A. Marking on the case: J13009-2. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
Set of 1
2.68£ VAT incl.
(2.23£ excl. VAT)
2.68£

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