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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V - NJW1302

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V - NJW1302
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Quantity excl. VAT VAT incl.
1 - 1 6.16£ 7.39£
2 - 2 5.85£ 7.02£
3 - 4 5.54£ 6.65£
5 - 9 5.23£ 6.28£
10 - 19 5.11£ 6.13£
20 - 29 4.99£ 5.99£
30 - 34 4.80£ 5.76£
Quantity U.P
1 - 1 6.16£ 7.39£
2 - 2 5.85£ 7.02£
3 - 4 5.54£ 6.65£
5 - 9 5.23£ 6.28£
10 - 19 5.11£ 6.13£
20 - 29 4.99£ 5.99£
30 - 34 4.80£ 5.76£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 34
Set of 1

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V - NJW1302. NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. C(in): 9pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30MHz. Function: audio power amplifier. Max hFE gain: 150. Minimum hFE gain: 75. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: complementary transistor (pair) NJW3281. BE diode: no. CE diode: no. Quantity in stock updated on 20/04/2025, 14:25.

Technical documentation

Equivalent products :

Quantity in stock : 83
MJL1302A

MJL1302A

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-...
MJL1302A
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL3281A. BE diode: no. CE diode: no
MJL1302A
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL3281A. BE diode: no. CE diode: no
Set of 1
8.00£ VAT incl.
(6.67£ excl. VAT)
8.00£
Quantity in stock : 53
MJW1302AG

MJW1302AG

NPN-Transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (accordi...
MJW1302AG
NPN-Transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201446. Max hFE gain: 200. Minimum hFE gain: 50. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW3281A. BE diode: no. CE diode: no
MJW1302AG
NPN-Transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201446. Max hFE gain: 200. Minimum hFE gain: 50. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW3281A. BE diode: no. CE diode: no
Set of 1
7.48£ VAT incl.
(6.23£ excl. VAT)
7.48£

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