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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 11A, 16A, 10uA, 0.08 Ohms, TO-220, TO-220, 60V - STP16NF06L

N-channel transistor, 11A, 16A, 10uA, 0.08 Ohms, TO-220, TO-220, 60V - STP16NF06L
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 0.78£ 0.94£
5 - 9 0.74£ 0.89£
10 - 24 0.71£ 0.85£
25 - 49 0.67£ 0.80£
50 - 71 0.65£ 0.78£
Quantity U.P
1 - 4 0.78£ 0.94£
5 - 9 0.74£ 0.89£
10 - 24 0.71£ 0.85£
25 - 49 0.67£ 0.80£
50 - 71 0.65£ 0.78£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 71
Set of 1

N-channel transistor, 11A, 16A, 10uA, 0.08 Ohms, TO-220, TO-220, 60V - STP16NF06L. N-channel transistor, 11A, 16A, 10uA, 0.08 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 11A. ID (T=25°C): 16A. Idss (max): 10uA. On-resistance Rds On: 0.08 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 345pF. Cost): 72pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Id(imp): 64A. IDss (min): 1uA. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 10 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 16V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Spec info: Low Gate Charge. G-S Protection: no. Quantity in stock updated on 21/04/2025, 06:25.

Technical documentation

Equivalent products :

Quantity in stock : 160
FQPF20N06L

FQPF20N06L

N-channel transistor, 11.1A, 15.7A, 10uA, 0.042 Ohms, TO-220FP, TO-220F, 60V. ID (T=100°C): 11.1A. ...
FQPF20N06L
N-channel transistor, 11.1A, 15.7A, 10uA, 0.042 Ohms, TO-220FP, TO-220F, 60V. ID (T=100°C): 11.1A. ID (T=25°C): 15.7A. Idss (max): 10uA. On-resistance Rds On: 0.042 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 60V. C(in): 480pF. Cost): 175pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 54 ns. Type of transistor: MOSFET. Id(imp): 62.8A. IDss (min): 1uA. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 10 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Function: Fast switch, Low gate charge 17nC, Low Crss 5.6pF. G-S Protection: no
FQPF20N06L
N-channel transistor, 11.1A, 15.7A, 10uA, 0.042 Ohms, TO-220FP, TO-220F, 60V. ID (T=100°C): 11.1A. ID (T=25°C): 15.7A. Idss (max): 10uA. On-resistance Rds On: 0.042 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 60V. C(in): 480pF. Cost): 175pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 54 ns. Type of transistor: MOSFET. Id(imp): 62.8A. IDss (min): 1uA. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 10 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Function: Fast switch, Low gate charge 17nC, Low Crss 5.6pF. G-S Protection: no
Set of 1
1.87£ VAT incl.
(1.56£ excl. VAT)
1.87£

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