N-channel transistor, TO-220, TO-220, 600V, 600V, TO220 - STP6NK60Z

N-channel transistor, TO-220, TO-220, 600V, 600V, TO220 - STP6NK60Z. N-channel transistor, TO-220, TO-220, 600V, 600V, TO220. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Vdss (Drain to Source Voltage): 600V. Housing: TO220. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 14 ns. Technology: SuperMESH Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Series: SuperMESH. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 4A. Drive Voltage: 10V. Rds On (Max) @ Id, Vgs: 2 Ohms / 2.8A / 10V. Vgs(th) (Max) @ Id: MOSFET. Qg (Total Gate Charge, Max @ Vgs): Zener-Protected, Power MOSFET transistor. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 75W. Operating temperature: 6A. Mounting Type: THT. Features: P6NK60Z. Information: 104W. MSL: 1 Ohm. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 24/07/2025, 02:25.