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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220, TO-220, 600V - FQP5N60C

N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220, TO-220, 600V - FQP5N60C
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 2.04£ 2.45£
5 - 9 1.94£ 2.33£
10 - 24 1.83£ 2.20£
25 - 46 1.73£ 2.08£
Quantity U.P
1 - 4 2.04£ 2.45£
5 - 9 1.94£ 2.33£
10 - 24 1.83£ 2.20£
25 - 46 1.73£ 2.08£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 46
Set of 1

N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220, TO-220, 600V - FQP5N60C. N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.6A. ID (T=25°C): 4.5A. Idss (max): 10uA. On-resistance Rds On: 2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 515pF. Cost): 55pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 18A. IDss (min): 1uA. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: 'enhancement mode power field effect transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 15nC, Low Crss 6.5pF. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 17:25.

Technical documentation

Equivalent products :

Quantity in stock : 50
IRFBC40

IRFBC40

N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (...
IRFBC40
N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 25A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
IRFBC40
N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 25A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
1.85£ VAT incl.
(1.54£ excl. VAT)
1.85£

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