N-channel transistor, 3.5A, 4.1A, 1uA, 4.1A, 0.052 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v - AO3407A

N-channel transistor, 3.5A, 4.1A, 1uA, 4.1A, 0.052 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v - AO3407A. N-channel transistor, 3.5A, 4.1A, 1uA, 4.1A, 0.052 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=100°C): 3.5A. ID (T=25°C): 4.1A. Idss: 1uA. Idss (max): 4.1A. On-resistance Rds On: 0.052 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 520pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: Switching or PWM applications. G-S Protection: no. Id(imp): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7.5 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Gate/source voltage Vgs: 20V. Original product from manufacturer Alpha & Omega Semiconductors. Quantity in stock updated on 08/06/2025, 03:25.