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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 12A, 1uA, 12A, 0.15 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 60V - RFD3055LESM

N-channel transistor, 12A, 1uA, 12A, 0.15 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 60V - RFD3055LESM
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.25£ 1.50£
5 - 9 1.18£ 1.42£
10 - 12 1.12£ 1.34£
Quantity U.P
1 - 4 1.25£ 1.50£
5 - 9 1.18£ 1.42£
10 - 12 1.12£ 1.34£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 12
Set of 1

N-channel transistor, 12A, 1uA, 12A, 0.15 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 60V - RFD3055LESM. N-channel transistor, 12A, 1uA, 12A, 0.15 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 60V. ID (T=25°C): 12A. Idss: 1uA. Idss (max): 12A. On-resistance Rds On: 0.15 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 60V. C(in): 850pF. Cost): 170pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. G-S Protection: diode. Marking on the case: F3055L. Pd (Power Dissipation, Max): 48W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 10 ns. Technology: 'Enhancement-Mode Power MOSFET'. Quantity per case: 1. Function: logic level control, ESD protection. Quantity in stock updated on 21/04/2025, 08:25.

Technical documentation

Equivalent products :

Quantity in stock : 161
IRFR024N

IRFR024N

N-channel transistor, 12A, 17A, 250uA, 0.075 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 5...
IRFR024N
N-channel transistor, 12A, 17A, 250uA, 0.075 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 370pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Id(imp): 68A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 4.9 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
IRFR024N
N-channel transistor, 12A, 17A, 250uA, 0.075 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 370pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Id(imp): 68A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 4.9 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
0.98£ VAT incl.
(0.82£ excl. VAT)
0.98£

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