Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.82£ | 0.98£ |
5 - 9 | 0.78£ | 0.94£ |
10 - 24 | 0.74£ | 0.89£ |
25 - 49 | 0.70£ | 0.84£ |
50 - 99 | 0.68£ | 0.82£ |
100 - 161 | 0.63£ | 0.76£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.82£ | 0.98£ |
5 - 9 | 0.78£ | 0.94£ |
10 - 24 | 0.74£ | 0.89£ |
25 - 49 | 0.70£ | 0.84£ |
50 - 99 | 0.68£ | 0.82£ |
100 - 161 | 0.63£ | 0.76£ |
N-channel transistor, 12A, 17A, 250uA, 0.075 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRFR024N. N-channel transistor, 12A, 17A, 250uA, 0.075 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 370pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Id(imp): 68A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 4.9 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 21/04/2025, 03:25.
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